Doctor Petar Igic
Swansea University, Principal Investigator
Dr Petar Igic, Head/Director of the Electronic System Design Centre and Director of EEE Board of Studies, is a Reader at the College of Engineering, Swansea University. He also held the esteemed EPSRC Advanced Fellowship for his study in the field of High Power IC technology development. Petar has 20 year experience of research in power semiconductor devices and technologies, electro-thermal compact modelling, modelling and characterisation of microelectronic power semiconductor devices, power electronics and renewable energy. Dr Igic has been leading Swansea University’s contribution to the £50M Low Carbon Research Institute, a pan-Wales university initiative amongst others.
Dr Grazia Todeschini
Swansea University, Senior Lecturer
I joined the College of Engineering at Swansea University after six years of work in the power industry with the aim to use my experience to solve the challenges related to the integration of power electronics devices in the transmission and distribution systems.
The research topics I am working on include:
Development of advanced control systems to provide robust and reliable operation of power-electronics devices, and study of the interaction of these devices with the power system
Development of ancillary functions which help to support grid operation, including reactive power injection, power oscillation damping and harmonic filtering.
Assessment of the impact of harmonic components on power measurements
The tools used to perform my research include computer simulations, laboratory testing and field testing.
Swansea University, Research Assistant
Stephen is an active researcher in the area of power electronics within the School of Engineering at Swansea University. He joined Swansea University in 1990 after working in electronics manufacturing industry for many years. He works on research projects as part of the ESDC research team, working mainly on projects in power electronics, energy efficiency and related power semiconductor issues. Specialised skills include: electronic circuit and power stage design; test system design; electronic system & device measurement & analysis; reliability of electronic systems & devices. Stephen gained an MPhil from Swansea University in 2005 and is currently undertaking a PhD with an expectation to graduate in 2018.
Dr Zhongfu Zhou
Swansea university, Lecturer
Dr Zhongfu Zhou is a Lecturer in Power Electronics in the College of Engineering at Swansea University. His research mainly focuses on the design and development of power electronics converters for renewable energy power conversion systems such as photovoltaic and wave energy power conversion systems, design and development of active front-end rectifier for motor control centre, active power filters for harmonic filtering of distribution system, photovoltaic simulators, real-time control schemes and various maximum power point tracking algorithms for photovoltaic systems.
Dr Soroush Faramehr
Swansea University, Research Assistant
Soroush is FLEXIS research assistant at the Electronic Systems Design Centre (ESDC) in Swansea. He completed his Master degree on Electronics Technology for Sustainable Energy and PhD on Electrical Engineering at Swansea University in 2011 and 2015, respectively. From 2015-2016, he was graduate teaching assistant at the college of engineering in Swansea. Since 2016, he has been a member of ESDC. He has a strong background on reliability and optimisation of GaN HEMTs for RF power applications. His interests lie in compound semiconductors devices, with particular focus on compact modelling and fabrication of lateral and vertical Gallium Nitride power FETs.
Dr Bethan Thomas
Bethan is a FLEXIS Research Assistant at the Electronic Systems Design Centre (ESDC) in Swansea. She graduated from her medical engineering degree at the College of Engineering in 2010 and went on to complete her PhD in diagnostic technology as part of the Centre for NanoHealth at Swansea University. Her current research is focused on electrical measurements and analysis of Gallium Nitride HEMTs, evaluating their performance and reliability for RF and power device application. She is also involved in high-temperature device packaging and the optimisation of fabrication and gate development of GaN lateral and vertical power FETs